A graphene integrated highly transparent resistive switching memory device
Abstract
We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (<±1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of ∼5 × 103. We also fabricated a ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 30, 2018
- Source ID
- 10.1063/1.5021099
Entities
People
- Brad R Weiner
- Gerardo Morell
- Ram S. Katiyar
- Shojan P. Pavunny
- Sita Dugu
- Tej B. Limbu
Organizations
- American Society for Engineering Education
- United States Department of Defense
- University of Puerto Rico