3D multilevel spin transfer torque devices
Abstract
Spin-transfer torque magnetic tunneling junction devices capable of a multilevel three-dimensional (3D) information processing are studied in the sub-20-nm size range. The devices are built using He+ and Ne+ focused ion beam etching. It has been demonstrated that due to their extreme scalability and energy efficiency, these devices can significantly reduce the device footprint compared to the modern CMOS approaches and add advanced features in a 3D stack with a sub-20-nm size using a spin polarized current.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 12, 2018
- Source ID
- 10.1063/1.5021336
Entities
People
- Brayan Navarrete
- Jeffrey Bokor
- Jeongmin Hong
- K. Luongo
- K. Xia
- Long You
- Mark Stone
- N. Xu
- Q. Zheng
- S. Khizroev
- Zifeng Yuan
Organizations
- Beijing Normal University
- Florida International University
- Huazhong University of Science and Technology
- National Natural Science Foundation of China
- National Science Foundation
- Office of Naval Research
- United States Department of Energy
- University of California, Berkeley