Hot LO-phonon limited electron transport in ZnO/MgZnO channels
Abstract
High-field electron transport in two-dimensional channels at ZnO/MgZnO heterointerfaces has been investigated experimentally. Pulsed current–voltage (I–V) and microwave noise measurements used voltage pulse widths down to 30 ns and electric fields up to 100 kV/cm. The samples investigated featured electron densities in the range of 4.2–6.5 × 1012 cm−2, and room temperature mobilities of 142–185 cm2/V s. The pulsed nature of the applied field ensured negligible, if any, change in the electron density, thereby allowing velocity extraction from current with confidence. The highest extracted electron drift velocity of ∼0.5 × 107 cm/s is somewhat smaller than that estimated for bulk ZnO; this difference is explained in the framework of longitudinal optical phonon accumulation (hot-phonon effect). The microwave noise data allowed us to rule out the effect of excess acoustic phonon temperature caused by Joule heating. Real-space transfer of hot electrons into the wider bandgap MgZnO layer was observed to be a limiting factor in samples with a high Mg content (48%), due to phase segregation and the associated local lowering of the potential barrier.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2018
- Source ID
- 10.1063/1.5022463
Entities
People
- A. Matulionis
- E. Šermukšnis
- H. Morkoc
- J. Liberis
- M. Toporkov
- V. Avrutin
- Ümit Özgür
Organizations
- Air Force Office of Scientific Research
- Research Council of Lithuania
- Semiconductor Physics Institute
- Virginia Commonwealth University