Auger losses in dilute InAsBi
Abstract
Density functional theory is used to determine the electronic band structure and eigenstates of dilute InAsBi bulk materials. The results serve as input for fully microscopic many-body models calculating the composition and carrier density dependent losses due to Auger recombination. At low to intermediate carrier concentrations, the Auger loss coefficients are found to be in the range of 10−27cm6/s for a low Bi content and around 10−25cm6/s for compositions suitable for long wavelength emission. It is shown that due to the fact that in InAsBi, the spin-orbit splitting is larger than the bandgap for all Bi contents, the Bi-dependent increase in the spin-orbit splitting does not lead to a significant suppression of the losses. Instead, unlike in GaAsBi, a mostly exponential increase in the losses with the decreasing bandgap is found for all compositions.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 07, 2018
- Source ID
- 10.1063/1.5022775
Entities
People
- J. Hader
- Jerome V. Moloney
- Lars C. Bannow
- S. R. Johnson
- Stephan W. Koch
- Ştefan C. Bǎdescu
Organizations
- Air Force Research Laboratory
- Arizona State University
- United States Air Force
- University of Marburg