Role of the different defects, their population and distribution in the LaAlO3/SrTiO3 heterostructure's behavior
Abstract
Hetero-interfaces between epitaxial LaAlO3 films and SrTiO3 substrates can exhibit an insulator-metal transition at a critical film thickness above which a quasi-two-dimensional electron gas forms. This work aims to elucidate the significant role the defects play in determining the sources of non-mobile and mobile carriers, the critical thickness, and the dipolar field screening. A model is built based on a comprehensive investigation of the origin of charge carriers and the advanced analysis of structural factors that affect the electronic properties of these hetero-epitaxial interfaces.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 20, 2018
- Source ID
- 10.1063/1.5024554
Entities
People
- Alp Sehirlioglu
- D. Jalabert
- H. Zaid
- I. Fongkaew
- M. H. Berger
- M. Walls
- N. J. Goble
- P. Berger
- R. Akrobetu
- W. Lambrecht
- X. P. A. Gao
Organizations
- Air Force Office of Scientific Research
- Case Western Reserve University
- Grenoble Alpes University
- Laboratory of Solid State Physics
- Mines ParisTech
- National Center for Scientific Research
- Suranaree University of Technology