Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Abstract
In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 23, 2018
- Source ID
- 10.1063/1.5025704
Entities
People
- Adam T. Neal
- Chandan Joishi
- Donald L. Dorsey
- Gregg H. Jessen
- Jared Johnson
- Jinwoo Hwang
- Joseph P. Heremans
- Kelson D. Chabak
- Mark Brenner
- Sanyam Bajaj
- Shin Mou
- Siddharth Rajan
- Yuanhua Zheng
- Yuewei Zhang
- Zhanbo Xia
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Defense Threat Reduction Agency
- Indian Institute of Technology Bombay
- Office of Naval Research
- Ohio State University