The MBE growth of arbitrarily thick SrTiO3/LaAlO3 quantum well heterostructures for use in next-generation optoelectronic devices
Abstract
While the SrTiO3/LaAlO3 (STO/LAO) materials system has been widely studied in the hopes of integrating it into transition metal oxide (TMO) electronic devices, recent reports have focused on its optical properties. Electronic confinement in STO quantum wells (QWs) and the optical modulation of confined charge carriers have recently been demonstrated, suggesting the feasibility of producing TMO-based QW optoelectronic devices. However, before these devices can be realized, it is necessary to develop the capability to grow such structures arbitrarily thick while maintaining high crystalline quality. We report on the fabrication of STO/LAO QW heterostructures and demonstrate via reflection high-energy electron diffraction, X-ray diffraction, reciprocal space mapping, and X-ray reflectivity measurements that these heterostructures can be grown arbitrarily thick while maintaining a high crystalline quality and uniform periodicity, in contrast to previous reports. While we focus primarily on the STO/LAO system in this report, we believe the growth and design principles contained herein can inform the growth of a multitude of different TMO QW heterostructures, paving the way for the next generation of TMO-based QW optoelectronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 02, 2018
- Source ID
- 10.1063/1.5026234
Entities
People
- Agham Posadas
- Alexander A Demkov
- J. Elliott Ortmann
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- University of Texas at Austin