Optical signatures of deep level defects in Ga2O3
Abstract
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the β-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 11, 2018
- Source ID
- 10.1063/1.5026770
Entities
People
- D. C. Look
- Geoffrey M. Foster
- Hantian Gao
- Holger von Wenckstern
- Hongping Zhao
- Lei. R. Cao
- Leonard J Brillson
- Marius Grundmann
- Masataka Higashiwaki
- Md Rezaul Karim
- Nicholas Pronin
- Shreyas Muralidharan
- Siddharth Rajan
- Sriram Krishnamoorthy
- Susan White
- Thaddeus J. Asel
Organizations
- Air Force Office of Scientific Research
- Division of Materials Research
- Leipzig University
- Ohio State University
- Wright State University