Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition
Abstract
Polycrystalline diamond stripes, with a nominal thickness of ∼1.5 μm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping reveal high compressive stress, up to ∼0.85 GPa, at the center of the diamond stripe, and moderate tensile stress, up to ∼0.14 GPa, in the substrate close to the interface with the diamond. Compressive stresses on diamond decrease with diminishing stripe widths. The stress map is well-described using finite element simulation incorporating solely thermal expansion effects.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 30, 2018
- Source ID
- 10.1063/1.5027507
Entities
People
- B. L. Hancock
- C. Engdahl
- E. L. Piner
- Jamesina Simpson
- M. Holtz
- Masoud H. Nazari
- Raju Ahmed
Organizations
- Texas State University
- United States Army