Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films
Abstract
We report on the dielectric response of epitaxial BaSnO3 films grown on Nb-doped SrTiO3 (001) substrates using a hybrid molecular beam epitaxy approach. Metal-insulator-metal capacitors were fabricated to obtain frequency- and temperature-dependent dielectric constant and loss. Irrespective of film thickness and cation stoichiometry, the dielectric constant obtained from Ba1−xSn1−yO3 films remained largely unchanged at 15-17 and was independent of frequency and temperature. A loss tangent of ∼1 × 10−3 at 1 kHz < f < 100 kHz was obtained for stoichiometric films, which increased significantly with non-stoichiometry. Using density functional theory calculations, these results are discussed in the context of point defect complexes that can form during film synthesis.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2018
- Source ID
- 10.1063/1.5027567
Entities
People
- Abhinav Prakash
- Arghya Bhowmik
- Bharat Jalan
- Jin Yue
- Juan Maria Garcia Lastra
- Ryan Haislmaier
- William Nunn
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- United States Department of Energy
- University of Minnesota
- Villum Foundation