Structure and vibrational properties of the dominant O-H center in β-Ga2O3
Abstract
Hydrogen has a strong influence on the electrical properties of transparent conducting oxides where it can give rise to shallow donors and can passivate deep compensating defects. We have carried out infrared absorption experiments on H- and D-doped β-Ga2O3 that involve temperature- and polarization-dependent effects as well as relative H- and D-concentrations to probe the defect structures that hydrogen can form. The results of analysis of these data, coupled with detailed theoretical calculations, show that the dominant O-H vibrational line observed at 3437 cm−1 for hydrogenated Ga2O3 is due to a relaxed VGa-2H center.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 04, 2018
- Source ID
- 10.1063/1.5029921
Entities
People
- Michael Stavola
- Philip Weiser
- Stephen Pearton
- W. Beall Fowler
- Ying Qin
Organizations
- Lehigh University
- National Science Foundation
- Sigma Xi
- United States Department of Defense
- University of Florida