Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy
Abstract
We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 23, 2018
- Source ID
- 10.1063/1.5031772
Entities
People
- Arthur C. Gossard
- Daehwan Jung
- Daniel J. Ironside
- John E. Bowers
- Seth R. Bank
Organizations
- ARPA-E
- Air Force Office of Scientific Research
- Division of Electrical, Communications & Cyber Systems
- University of California, Santa Barbara
- University of Texas at Austin