VECSEL design for high peak power ultrashort mode-locked operation
Abstract
The generation of mode-locked pulses in vertical external-cavity surface-emitting lasers with a semiconductor saturable absorber mirror is studied by numerically solving the Maxwell semiconductor Bloch equations describing the propagating light field coupled to the electron-hole-pair excitations in the quantum wells. High peak-power sub-100 fs mode-locked pulses are realized through optimizing the gain chip design. The unequal spacing of up to four quantum wells in a given field antinode leads to a broad linear gain profile and reduced intracavity dispersion. The proposed designs are found to be robust with regard to uncontrollable growth uncertainties.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 25, 2018
- Source ID
- 10.1063/1.5033456
Entities
People
- I. Kilen
- J. Hader
- Jerome V. Moloney
- Stephan W. Koch
Organizations
- Air Force Office of Scientific Research
- University of Arizona
- University of Marburg