Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane
Abstract
We use a combination of optical and electrostatic surface science techniques to measure electronically active native defects in multilayer GeCH3 and GeH, two-dimensional (2D) functionalized materials. Chemical processing techniques coupled with density functional theory enable us to identify the specific physical nature of both native point defects and synthesis-related impurities which can limit the optical and charge transport properties of these materials. Direct comparison of optical measurements with calculated electronic levels provides identification of these localized, deep level gap states and confirms partial H-passivation of dangling bonds, revealing synthesis and processing methods needed to control specific defects and optimize these 2D materials for emergent solid state-electronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 06, 2018
- Source ID
- 10.1063/1.5034460
Entities
People
- Amanda Trout
- David W McComb
- Eric Yanchenko
- Joshua E Goldberger
- Kevin Krymowski
- Leonard J Brillson
- Shishi Jiang
- Thaddeus J. Asel
- Wolfgang Windl
- Yang Xiao
- Yaxian Wang
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Ohio State University