Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
Abstract
A high current density of 1 kA/cm2 is experimentally realized in enhancement-mode Ga2O3 vertical power metal-insulator field-effect transistors with fin-shaped channels. Comparative analysis shows that the more than doubled current density over the prior art arises from a larger transistor channel width; on the other hand, a wider channel also leads to a more severe drain-induced barrier lowering therefore premature transistor breakdown at zero gate-source bias. The observation of a higher current density in a wider channel confirms that charge trapping in the gate dielectric limits the effective field-effect mobility in these transistor channels, which is about 2× smaller than the electron mobility in the Ga2O3 drift layer. The tradeoff between output-current density and breakdown voltage also depends on the trap density. With minimal trap states, the output current density should remain high while breakdown voltage increases with decreasing fin-channel width.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 17, 2018
- Source ID
- 10.1063/1.5038105
Entities
People
- Akito Kuramata
- Debdeep Jena
- Huili Grace Xing
- Kazuki Nomoto
- Kohei Sasaki
- Nicholas Tanen
- Quang Tu Thieu
- Tohru Nakamura
- Wenshen Li
- Zexuan Zhang
- Zongyang Hu
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Hosei University
- National Science Foundation
- Novel Crystal Technology, Inc.