Dynamic behavior of CH3NH3PbI3 perovskite twin domains

Abstract

The recent discovery of twin domains in MAPbI3 perovskites has initiated contentious discussion on the ferroic nature of hybrid perovskites. Ferroelectric polarization is thought to facilitate the dissociation of photoinduced electron-hole pairs, helping to explain the extraordinary photovoltaic performance exhibited by this class of materials. Alternate to ferroelectricity, which has yet to be unambiguously established despite considerable efforts to do so, ferroelasticity was also proposed in these materials. Meanwhile, given the coupling of ionic states and ferroelectricity and the interconnected nature of defect chemistry and ferroelasticity, the electrochemical reactivity can no longer be ignored. In this work, using band excitation piezoresponse force microscopy, we reveal the variation in elasticity between adjacent domains, indicating the ferroelasticity and the difference in the crystallographic states of the twin domain. Moreover, using band excitation contact Kelvin probe force microscopy, we dynamically map the evolution of the twinning structure under electric bias. These results help decipher the effect of the twin domains on ionic mobility and ion diffusion pathways. Combining these results, we reveal the interaction of twin domains and ionic activity in this material. Overall, this work provides insights into the twinning structure in MAPbI3 and its potential effects on the hybrid perovskite optoelectronics.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 13, 2018
Source ID
10.1063/1.5041256

Entities

People

  • Alex Belianinov
  • Anton V Ievlev
  • Bin Hu
  • Kai Xiao
  • Liam Collins
  • Mahshid Ahmadi
  • Olga S Ovchinnikova
  • Sabine M Neumayer
  • Scott T. Retterer
  • Sergei V. Kalinin
  • Stephen Jesse
  • Yongtao Liu

Organizations

  • Air Force Office of Scientific Research
  • Center for Selective C–H Functionalization
  • Oak Ridge National Laboratory
  • University of Tennessee

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics