Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors
Abstract
Tunneling in a transistor is a critical quantum process toward the next-generation, energy-efficient, high-speed data transfer for both electrical and optical communications. In this work, resonant-cavity quantum-well light-emitting transistors with tunneling collector junctions are designed and fabricated. Three distinctive tunneling mechanisms are clearly identified by the transistor optical output family curves, namely, electron direct tunneling (DT) from collector to base, electron DT from base to collector, and intra-cavity photon-assisted electron tunneling from base to collector. The device operations under both direct and photon-assisted tunneling are explained in detail by the intra-cavity quantum transition of electron-hole pair to photon dynamics. The tunnel junction and the corresponding carrier tunneling injection suggest the possibility of utilizing tunneling to achieve high-speed optoelectronics operations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 18, 2018
- Source ID
- 10.1063/1.5042418
Entities
People
- Curtis Y. Wang
- Junyi Qiu
- Milton Feng
- N. Holonyak Jr.
Organizations
- Army Research Office
- National Science Foundation
- Semiconductor Research Corporation
- University of Illinois Urbana–Champaign