The intrinsic atomic-level surface roughness mobility limit of 4H-SiC
Abstract
Presently, models to describe surface roughness scattering combine intrinsic and extrinsic effects, where extrinsic effects include process-induced interactions and intrinsic effects are due to inherent atomic structure. In this work, we present a general method for extracting the intrinsic surface roughness scattering rate of a material interface from the atomic structure, using Density Functional Theory and Fermi's Golden Rule. We find for the case of the 4H-SiC/SiO2 interface, intrinsic surface roughness mobility is several orders of magnitude greater than the extrinsic mobility which depends on process induced nonidealities. This result suggests that a path forward for higher mobility SiC devices may be the reduction of extrinsic miscut roughness.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 11, 2018
- Source ID
- 10.1063/1.5042765
Entities
People
- C. Darmody
- N. Goldsman
Organizations
- United States Army Research Laboratory
- University of Maryland