A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
Abstract
A thermodynamic supersaturation model for growth of AlGaN by metalorganic chemical vapor deposition was developed for experimentally accessible growth parameters. The derived non-linear relationships enabled us to estimate Ga and Al supersaturation during AlGaN growth for given growth conditions. Calculations revealed that the GaN phase was close to chemical equilibrium, while the Al supersaturation was as high as 1010 for typical growth conditions. Such a disparity in the supersaturation of reaction species plays a significant role in the stability of the growth of the resulting ternary alloy. The agreement between experiment and simulation suggests that the parasitic gas phase reactions between trimethylaluminum and NH3 were not significant at low NH3 flow rates/partial pressures, indicating that, under these conditions, the AlGaN growth was thermodynamically limited.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 18, 2018
- Source ID
- 10.1063/1.5045058
Entities
People
- Felix Kaess
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Shun Washiyama
- Zlatko Sitar
Organizations
- Army Research Office
- National Science Foundation
- North Carolina State University