Radiation-induced changes of vacancy-type defects in ferroelectric capacitors as revealed by Doppler broadening positron annihilation spectroscopy
Abstract
Thin film ferroelectric capacitors of composition Pb(Zr0.52Ti0.48)O3 were exposed to Fe3+ radiation (1011 to 1013 ions/cm2), and the change in the defect structure was investigated by Doppler broadening positron annihilation spectroscopy and other characterization techniques. As the radiation fluence increases, a systematic drop of the S parameter of the positron annihilation photopeak is observed and attributed to an increase in the Zr- and Ti-site related vacancies relative to the Pb-sites. The results demonstrate that the radiation has a more significant influence on the Zr- and Ti-sites relative to the Pb-sites. It is also observed that the S parameter of the Mn-doped samples is higher than the undoped counterparts. Coupled with ferroelectricity measurements and X-ray diffraction, the results suggest that the Mn dopant modifies the initial structure of the material and leads to a different functional response.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 28, 2018
- Source ID
- 10.1063/1.5045189
Entities
People
- Ayman I. Hawari
- Cory D. Cress
- Evan R. Glaser
- Hanhan Zhou
- Jacob L. Jones
- Lee A. Griffin
- Manuel Rivas
- Ming Liu
- Nazanin Bassiri-Gharb
- Ronald G. Polcawich
- Ryan Q. Rudy
- Samuel C Williams
Organizations
- Defense Threat Reduction Agency
- Georgia Tech
- National Science Foundation
- North Carolina State University
- United States Army Research Laboratory
- United States Department of Energy
- United States Naval Research Laboratory