Strain effect on band structure of InAlAs digital alloy
Abstract
Recently, InAlAs digital alloys have been shown to exhibit unique electronic dispersion properties, which can be used to make low-noise avalanche photodiodes. In this paper, the strain effect is analyzed for its impact on the band structure of the InAlAs digital alloy. Simulation using a tight binding model that includes the strain effect yields bandgap energies that are consistent with experimental results. The bandgap would be larger without strain. In addition, a positive relationship has been found between minigaps of the InAlAs digital alloy and the band offset between bulk InAs and AlAs at the same position in k-space.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 07, 2018
- Source ID
- 10.1063/1.5045476
Entities
People
- Avik W. Ghosh
- J. C. Campbell
- Jiangbin Zheng
- Yuan Yuan
- Yuanzheng Paul Tan
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- Synopsys
- University of Virginia