High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
Abstract
Semi-insulating halide vapor phase epitaxial β-Ga2O3 films without intentional dopants introduced during growth are demonstrated. The sheet resistance measured in the 340–480 K range yielded 268–134 kΩ/◻ and an activation energy of 0.81 eV. Room temperature capacitance-voltage measurements at 1 MHz showed evidence of an ultra-low free carrier concentration n-type film with a free carrier concentration near flatband (VFB ∼ 4.4 V) estimated to be <1014 cm−3, resulting in a high breakdown voltage of 2380 V (3.18 MV/cm) measured on a lateral diode without field termination. Secondary ion mass spectroscopy did not reveal Fe compensating species; however, an average Si concentration of about 5 × 1015 cm−3 and an N concentration of about 2 × 1017 cm−3 were detected, suggesting that N acceptors compensated Si donors to result in a nearly intrinsic β-Ga2O3 film. Photoionization spectroscopy suggested the presence of a deep acceptor-like level located at Ec −0.23 eV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 05, 2018
- Source ID
- 10.1063/1.5045601
Entities
People
- Akito Kuramata
- Andrew D. Koehler
- Daiki Wakimoto
- Evan R. Glaser
- Fritz J. Kub
- Jaime A. Freitas Jr.
- James C. Gallagher
- Karl D. Hobart
- Ken Goto
- Kohei Sasaki
- Marko J. Tadjer
- Matty C. Specht
- Quang T. Thieu
- Shinya Watanabe
- Travis J. Anderson
Organizations
- American Society for Engineering Education
- Office of Naval Research Global
- Tamura Corporation
- United States Naval Research Laboratory