Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
Abstract
Carrier removal rates and electron and hole trap densities in β-Ga2O3 films grown by hydride vapor phase epitaxy (HVPE) and irradiated with 18 MeV α-particles and 20 MeV protons were measured and compared to the results of modeling. The electron removal rates for proton and α-radiation were found to be close to the theoretical production rates of vacancies, whereas the concentrations of major electron and hole traps were much lower, suggesting that the main process responsible for carrier removal is the formation of neutral complexes between vacancies and shallow donors. There is a concurrent decrease in the diffusion length of nonequilibrium charge carriers after irradiation, which correlates with the increase in density of the main electron traps E2* at Ec − (0.75–0.78) eV, E3 at Ec − (0.95–1.05) eV, and E4 at Ec − 1.2 eV. The introduction rates of these traps are similar for the 18 MeV α-particles and 20 MeV protons and are much lower than the carrier removal rates.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 27, 2018
- Source ID
- 10.1063/1.5049130
Entities
People
- A. Y. Polyakov
- Chaker Fares
- Eugene Yakimov
- Fan Ren
- I. V. Shchemerov
- Jiancheng Yang
- Jihyun Kim
- N. B. Smirnov
- Stephen Pearton
- V. S. Stolbunov
- А. I. Kochkova
- П. Б. Лагов
Organizations
- Defense Threat Reduction Agency
- Korea University
- Ministry of Education and Science of the Russian Federation
- Ministry of Trade, Industry and Energy
- National University of Science and Technology
- Russian Academy of Sciences
- University of Florida