Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques
Abstract
Thermally stimulated techniques—thermally stimulated current (TSC) spectroscopy and thermally stimulated depolarization current (TSDC) spectroscopy—were used to comparatively study the electrical properties and deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk crystals. It was found that the samples are highly resistive and each sample may have different dark current activation energy. Deep level defects revealed by the thermally stimulated techniques vary from sample to sample. In addition to the common traps E1 (∼0.56 eV), E2 (∼0.84 eV), and E3 (∼0.99 eV), reported in the literature and revealed by DLTS studies of Ga2O3 bulk crystals, that were also found in our samples by the thermally stimulated techniques, a trap at ∼110 meV and several other traps are revealed specifically by TSDC between 105 and 225 K.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 14, 2019
- Source ID
- 10.1063/1.5049820
Entities
People
- Buguo Wang
- D. C. Look
- Kevin Leedy
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Division of Materials Research
- Wright State University