Transport properties of near surface InAs two-dimensional heterostructures
Abstract
Two-dimensional electron systems confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid device architectures and study of exotic states in proximity to superconductors. In this work, we study indium arsenide heterostructures where a combination of a clean interface with superconductivity, high mobility, and spin-orbit coupling can be achieved. The weak antilocalization measurements indicate the presence of strong spin-orbit coupling at high densities. We study the magnetotransport as a function of top barrier and density and report a clear observation of integer quantum Hall states. We report improved electron mobility reaching up to 44 000 cm2/Vs in undoped heterostructures and well developed integer quantum Hall states starting as low as 2.5 T.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 24, 2018
- Source ID
- 10.1063/1.5050413
Entities
People
- Javad Shabani
- Joseph Yuan
- Kaushini S. Wickramasinghe
- Lucy Jiao
- Tri Nguyen
- Vladimir E Manucharyan
- William Mayer
Organizations
- Army Research Office
- City College of New York
- Defense Advanced Research Projects Agency
- New York University
- University of Maryland