Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
Abstract
Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si–Ge interface with a focus on the role of inelastic bulk phonon processes. We observe significant inelastic scattering near the interface that redistributes the heat among the phonons as a result of non-equilibrium effects driven by the junction. These effects are most pronounced when the length of the junction is comparable to the average phonon mean-free-path. What controls these inelastic processes is elucidated.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 11, 2018
- Source ID
- 10.1063/1.5051538
Entities
People
- Jesse Maassen
- Vahid Askarpour
Organizations
- Dalhousie University
- Defense Advanced Research Projects Agency
- Natural Sciences and Engineering Research Council