Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers
Abstract
Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 19, 2018
- Source ID
- 10.1063/1.5051767
Entities
People
- B. Laikhtman
- Dmitry Smirnov
- G. Kipshidze
- Gregory Belenky
- M. M. Ermolaev
- Mykhaylo Ozerov
- Seongphill Moon
- Sergey Suchalkin
- Stefan P. Svensson
- Wendy L. Sarney
Organizations
- Army Research Office
- Florida State University
- Hebrew University of Jerusalem
- National High Magnetic Field Laboratory
- National Science Foundation
- Stony Brook University
- United States Department of Energy