Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films
Abstract
We report on the thermal resistances of thin films (20 nm) of hafnium zirconium oxide (Hf1–xZrxO2) with compositions ranging from 0 ≤ x ≤ 1. Measurements were made via time-domain thermoreflectance and analyzed to determine the effective thermal resistance of the films in addition to their associated thermal boundary resistances. We find effective thermal resistances ranging from 28.79 to 24.72 m2 K GW−1 for amorphous films, which decreased to 15.81 m2 K GW−1 upon crystallization. Furthermore, we analyze the heat capacity for two compositions, x = 0.5 and x = 0.7, of Hf1–xZrxO2 and find them to be 2.18 ± 0.56 and 2.64 ± 0.53 MJ m−3 K−1, respectively.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 05, 2018
- Source ID
- 10.1063/1.5052244
Entities
People
- Ashutosh Giri
- Christina M. Rost
- Ethan A. Scott
- John Gaskins
- Jon Ihlefeld
- M. David Henry
- Patrick E Hopkins
- Samantha T. Jaszewski
- Sean W. Smith
- Shelby S. Fields
Organizations
- Air Force Office of Scientific Research
- Sandia National Laboratories
- University of Virginia