All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
Abstract
In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-quantum-well structures were demonstrated. Lasing performance was investigated via two 4-well samples. The thinner GeSn well sample exhibits a maximum lasing temperature of 20 K and a threshold of 55 kW/cm2 at 10 K, while the thicker well sample features a higher maximum operating temperature of 90 K and lower lasing thresholds of 25 and 62 kW/cm2 at 10 and 77 K, respectively. The distinct results were tentatively interpreted mainly by the difference of gain volume. This result provides guidance for the future GeSn quantum well laser optimization for higher performance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 26, 2018
- Source ID
- 10.1063/1.5052563
Entities
People
- Aboozar Mosleh
- Alicia Wadsworth
- Bader Alharthi
- Baohua Li
- Greg Sun
- Gregory B. Thompson
- Grey Abernathy
- Huong Q Tran
- Jifeng Liu
- Joe Margetis
- John Tolle
- Mansour Mortazavi
- Perry C. Grant
- Qianying Guo
- Richard Soref
- Seyed Amir Ghetmiri
- Shui-Qing Yu
- Solomon Ojo
- Wei Dou
- Wei Du
- Yiyin Zhou
Organizations
- Air Force Office of Scientific Research
- Dartmouth College
- Experimental Program to Stimulate Competitive Research
- National Science Foundation
- United States Army Research Laboratory
- University of Alabama
- University of Arkansas
- University of Arkansas at Pine Bluff
- University of Massachusetts
- Wilkes University