p-Diamond as candidate for plasmonic terahertz and far infrared applications

Abstract

High values of the hole mobility, low contact resistance, and high hole sheet densities in diamond two-dimensional hole gas make p-diamond field effect transistors superb candidates for implementing high temperature plasmonic sub-terahertz, terahertz, and far infrared devices. Our calculations show that p-diamond sub-THz transistors are viable contenders, especially for applications in the 200 to 600 GHz atmospheric window which are of special interest for the beyond 5 G sub-THz communications.

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 17, 2018
Source ID
10.1063/1.5053091

Entities

People

  • Greg Rupper
  • Michael Shur
  • Sergey Rudin
  • Tony Ivanov

Organizations

  • Office of Naval Research Global
  • Rensselaer Polytechnic Institute
  • United States Army Research Laboratory

Tags

Fields of Study

  • Physics

Readers

  • Fault Tolerant Diagnosis of Black and White Balloon Isolation Tests Using ¥.
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • 5G