Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station
Abstract
We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for high-temperature and high-power MOSFET applications. These measurements are made via both “rapid scan” frequency-swept EDMR and “slow scan” frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1063/1.5053665
Entities
People
- Duane J McCrory
- Jason P Campbell
- Jason T. Ryan
- Kin P Cheung
- Mark Anders
- Patrick M. Lenahan
- Pragya R. Shrestha
Organizations
- Air Force Office of Scientific Research
- National Institute of Standards and Technology
- Pennsylvania State University
- United States Army Research Laboratory