Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures
Abstract
We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluate the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP-channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2019
- Source ID
- 10.1063/1.5054142
Entities
People
- Maxim Ryzhii
- Michael S. Shur
- Taiichi Otsuji
- V. G. Leiman
- V. Ryzhii
- Vladimir Mitin
- Д. С. Пономарев
Organizations
- Bauman Moscow State Technical University
- Moscow Institute of Physics and Technology
- Office of Naval Research Global
- Rensselaer Polytechnic Institute
- Russian Center for Science Information
- Russian Science Foundation
- Tohoku University
- University at Buffalo
- University of Aizu