Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon
Abstract
La-doped BaSnO3 has been epitaxially integrated with (001) Si using an SrTiO3 buffer layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO3 buffer layer was grown to enhance the mobility of the overlying La-doped BaSnO3 layer. The x-ray diffraction rocking curve of the BaSnO3 002 peak has a full width at half maximum of 0.02°. At room temperature, the resistivity of the La-doped BaSnO3 film is 3.6 × 10−4 Ω cm and the mobility is 128 cm2 V−1 s−1 at a carrier concentration of 1.4 × 1020 cm−3. These values compare favorably to those of La-doped BaSnO3 films grown by all techniques other than MBE on single-crystal oxide substrates. Our work opens an exciting arena for integrating hyper-functional oxide electronics that make use of high-mobility oxide films with the workhorse of the semiconductor industry, silicon.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 22, 2019
- Source ID
- 10.1063/1.5054810
Entities
People
- Darrell G. Schlom
- David A. Muller
- Hanjong Paik
- Zhe Wang
- Zhen Chen
Organizations
- Air Force Office of Scientific Research
- Cornell University
- National Science Foundation