Directly photoexcited Dirac and Weyl fermions in ZrSiS and NbAs

Abstract

We report ultrafast optical measurements of the Dirac line-node semimetal ZrSiS and the Weyl semimetal NbAs, using mid-infrared pump photons from 86 meV to 500 meV to directly excite Dirac and Weyl fermions within the linearly dispersing bands. In NbAs, the photoexcited Weyl fermions initially form a non-thermal distribution, signified by a brief spike in the differential reflectivity whose sign is controlled by the relative energy of the pump and probe photons. In ZrSiS, electron-electron scattering rapidly thermalizes the electrons, and the spike is not observed. Subsequently, hot carriers in both materials cool within a few picoseconds. This cooling, as seen in the two materials' differential reflectivity, differs in sign, shape, and timescale. Nonetheless, we find that it may be described in a simple model of thermal electrons, without free parameters. The electronic cooling in ZrSiS is particularly fast, which may make the material useful for optoelectronic applications.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 26, 2018
Source ID
10.1063/1.5055207

Entities

People

  • Alex Nateprov
  • Bala Murali Krishna Mariserla
  • Bettina Lotsch
  • C. Weber
  • Ernest Arushanov
  • Hans A. Bechtel
  • J. Matthew Kim
  • Keshav M Dani
  • Leslie M Schoop
  • Mazhar Ali
  • Robert C. Newby
  • Stuart Parkin

Organizations

  • Army Research Office
  • Central University of Karnataka
  • Institute of Applied Physics
  • Lawrence Berkeley National Laboratory
  • Ludwig-Maximilians-Universität München
  • Max Planck Institute for Microstructure Physics
  • Max Planck Institute for Solid State Research
  • National Science Foundation
  • Okinawa Institute of Science and Technology
  • Princeton University
  • Santa Clara University
  • United States Department of Energy

Tags

Fields of Study

  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Pulsed Power and Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene