Ultrawide strain-tuning of light emission from InGaAs nanomembranes
Abstract
Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. These mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 12, 2018
- Source ID
- 10.1063/1.5055869
Entities
People
- Abhishek Bhat
- D. E. Savage
- John L. Reno
- Max G. Lagally
- Roberto Paiella
- Xiaorui Cui
- Xiaowei Wang
Organizations
- Air Force Office of Scientific Research
- Boston University
- National Science Foundation
- Sandia National Laboratories
- United States Department of Energy
- University of Wisconsin–Madison