Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
Abstract
We report on a high performance Pt/n−Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using ∼30 Å thick semi-transparent Pt that has up to 90% transparency to UV radiation with wavelengths < 260 nm. The fabricated photodiode exhibited Schottky characteristics with a turn-on voltage of ∼1 V and a rectification ratio of ∼108 at ±2 V and showed deep UV solar blind detection at 0 V. The Schottky photodiode exhibited good device characteristics such as an ideality factor of 1.23 and a breakdown voltage of ∼110 V. The spectral response showed a maximum absolute responsivity of 0.16 A/W at 222 nm at zero bias corresponding to an external quantum efficiency of ∼87.5%. The cutoff wavelength and the out of band rejection ratio of the devices were ∼260 nm and ∼104, respectively, showing a true solar blind operation with an excellent selectivity. The time response is in the millisecond range and has no long-time decay component which is common in photoconductive wide bandgap devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 01, 2019
- Source ID
- 10.1063/1.5064471
Entities
People
- A. Osinsky
- Akhil Mauze
- Brian Hertog
- Fikadu Alema
- James S. Speck
- Partha Mukhopadhyay
- T. J. Vogt
- Winston V. Schoenfeld
- Yuewei Zhang
Organizations
- Air Force Office of Scientific Research
- Office of Naval Research Global
- St. Cloud State University
- University of Central Florida