Electron Monte Carlo simulations of nanoporous Si thin films—The influence of pore-edge charges
Abstract
Electron transport within nanostructures can be important for various engineering applications, such as thermoelectrics and nanoelectronics. In theoretical studies, electron Monte Carlo simulations are widely used as an alternative approach to solving the electron Boltzmann transport equation, where the energy-dependent electron scattering, exact structure shape, and detailed electric field distribution can be fully incorporated. In this work, such electron Monte Carlo simulations are employed to predict the electrical conductivity of periodic nanoporous Si films that have been widely studied for thermoelectric applications. The focus is on the influence of pore-edge charges on the electron transport. The results are further compared to our previous analytical modeling [Hao et al., J. Appl. Phys. 121, 094308 (2017)], where the pore-edge electric field has its own scattering rate to be added to the scattering rates of other mechanisms.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 12, 2019
- Source ID
- 10.1063/1.5078951
Entities
People
- Qing Hao
- Yue Xiao
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- University of Arizona