Electron injection-induced effects in Si-doped β-Ga2O3
Abstract
The impact of electron injection, using 10 keV beam of a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga2O3 was studied for temperatures ranging from room to 120°C. In-situ Electron Beam-Induced Current technique was employed to determine the diffusion length of minority holes as a function of temperature and duration of electron injection. The experiments revealed a pronounced elongation of hole diffusion length with increasing duration of injection. The activation energy, associated with the electron injection-induced elongation of the diffusion length, was determined at ∼ 74 meV and matches the previous independent studies. It was additionally discovered that an increase of the diffusion length in the regions affected by electron injection is accompanied by a simultaneous decrease of cathodoluminescence intensity. Both effects were attributed to increasing non-equilibrium hole lifetime in the valence band of β-Ga2O3 semiconductor.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1063/1.5079730
Entities
People
- Fan Ren
- Igor Lubomirsky
- Jiancheng Yang
- Jonathan Lee
- Leonid Chernyak
- Sergey Khodorov
- Stephen Pearton
- Sushrut Modak
Organizations
- Defense Threat Reduction Agency
- NATO
- National Science Foundation
- University of Central Florida
- University of Florida
- Weizmann Institute of Science