Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications
Abstract
Epitaxial barium titanate (BTO) thin films are grown on strontium titanate-buffered Si(001) using atomic layer deposition (ALD) at 225 °C. X-ray diffraction confirms compressive strain in BTO films after the low temperature growth for films as thick as 66 nm, with the BTO c-axis oriented in the out-of-plane direction. Postdeposition annealing above 650 °C leads to an in-plane c-axis orientation. Piezoresponse force microscopy was used to verify the ferroelectric switching behavior of ALD-grown films. Electrical and electro-optic measurements confirm BTO film ferroelectric behavior in out-of-plane and in-plane directions, respectively, at the micrometer scale.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 08, 2019
- Source ID
- 10.1063/1.5087571
Entities
People
- Agham Posadas
- Alexander A Demkov
- Edward L. Lin
- J. Elliott Ortmann
- Jean Fompeyrine
- John G Ekerdt
- Keji Lai
- Lu Zheng
- Stefan Abel
Organizations
- Air Force Office of Scientific Research
- European Commission
- International Business Machines Corporation (Armonk, NY)
- National Science Foundation
- National Science Foundation Directorate for Mathematical & Physical Sciences
- University of Texas at Austin