Impact of superlinear defect-related recombination on LED performance at low injection
Abstract
We investigate the temperature and injection dependence of the electroluminescence from an InGaN/GaN LED to characterize the defect-related recombination mechanism in this system. In contrast to the standard ABC recombination model, we show that the defect-related recombination rate varies superlinearly with carrier density. The elevated loss rate with injection indicates that defect states are less detrimental at low injection, only becoming available for occupation via carrier delocalization or more dynamic Shockley–Read–Hall statistics. This characteristic alleviates defect-related losses by making the radiative mechanism more competitive such that high dislocation density devices can perform better at low injection.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 28, 2019
- Source ID
- 10.1063/1.5089125
Entities
People
- Grace Watt
- Ruiming Chen
- T. H. Gfroerer
- Yong Zhang
- Zhiqiang Liu
Organizations
- Army Research Office
- Davidson College
- Guangzhou Science and Technology Program key projects
- Institute of Semiconductors
- University of North Carolina at Charlotte