Tuning of energy dispersion properties in InAlAs digital alloys
Abstract
InAlAs digital alloy avalanche photodiodes (APDs) exhibit lower noise than their random alloy counterparts. The electronic dispersion properties of digital alloy materials are unique, creating minigaps in their valence band structure. In this paper, we use computational models with environment-dependent tight-binding parameters to calculate the electronic dispersion properties of InAlAs digital alloys with various stacking directions, stacking modes, and periods, which can provide guidance for optimizing the structure of InAlAs digital alloy APDs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 28, 2019
- Source ID
- 10.1063/1.5091694
Entities
People
- Avik W. Ghosh
- J. C. Campbell
- Jiangbin Zheng
- Yuan Yuan
- Yuanzheng Paul Tan
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- Synopsys
- University of Virginia