Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
Abstract
Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest doped samples revealed dominant A traps with level Ec − 0.6 eV and B traps near Ec − 1.1 eV. With increasing shallow donor concentration, the density of the A traps increased, and new traps C (Ec − 0.85 eV) and D (Ec − 0.23 eV) emerged. Photocapacitance spectra showed the presence of deep traps with optical ionization energy of ∼2 and 2.7 eV and prominent persistent photocapacitance at low temperature, surviving heating to temperatures above room temperature. The diffusion length of nonequilibrium charge carriers was 0.15 µm, and microcathodoluminescence spectra showed peaks in the range 339–540 nm, but no band-edge emission.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2019
- Source ID
- 10.1063/1.5094787
Entities
People
- A. S. Shikoh
- A. Y. Polyakov
- A.A. Vasil'ev
- Eugene Yakimov
- I. V. Shchemerov
- N. B. Smirnov
- S. I. Stepanov
- Stephen Pearton
- А. I. Kochkova
- А. В. Черных
- А. И. Печников
- В. И. Николаев
- К. Д. Щербачев
Organizations
- Defense Threat Reduction Agency
- Division of Materials Research
- Ioffe Institute
- Ministry of Education and Science of the Russian Federation
- National University of Science and Technology
- Russian Academy of Sciences
- University of Florida