930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
Abstract
We report on the design and fabrication of ultrahigh current density GaN/AlN double barrier resonant tunneling diodes grown via rf-plasma assisted molecular-beam epitaxy. The device structure was grown on a metal-organic chemical vapor deposition GaN-on-sapphire template. The devices displayed repeatable room temperature negative differential resistance with peak tunneling current densities (Jp) between 637 and 930 kA/cm2. Analysis of temperature dependent measurements revealed the presence of severe self-heating effects, which allow strong phonon scattering that deteriorates the electron quantum transport. Finally, a qualitative comparison to the same structure grown on a low dislocation density freestanding GaN substrate has shown that sapphire-based templates are a feasible alternative.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 20, 2019
- Source ID
- 10.1063/1.5095056
Entities
People
- David F. Storm
- David J. Meyer
- Elliott R. Brown
- Evan M. Cornuelle
- Jeffrey W Daulton
- Logan Whitaker
- Paul R. Berger
- R. J. Molnar
- Tyler A Growden
- Weidong Zhang
Organizations
- Massachusetts Institute of Technology
- National Science Foundation
- Office Of The Under Secretary Of Defense
- Office of Naval Research
- Ohio State University
- United States Naval Research Laboratory
- Wright State University