Velocity saturation in La-doped BaSnO3 thin films
Abstract
BaSnO3, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining the device performance. We report on the experimental measurement of the electron saturation velocity in La-doped BaSnO3 thin films for a range of doping densities. The predicted saturation velocities based on a simple LO-phonon emission mode, using an effective LO phonon energy of 120 meV show good agreement with the measurements of velocity saturation in La-doped BaSnO3 films. Density-dependent saturation velocity in the range of 1.8 × 107 cm/s reducing to 2 × 106 cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 1013 cm−2 to 2 × 1014 cm−2, respectively. These results are expected to aid the informed design of BaSnO3 as an active material for high-charge density electronic transistors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 26, 2019
- Source ID
- 10.1063/1.5097791
Entities
People
- Aaron R. Arehart
- Anderson Janotti
- Christopher R. Freeze
- Hareesh Chandrasekar
- Joe F. McGlone
- Junao Cheng
- Nicholas G. Combs
- Patrick B. Marshall
- Siddharth Rajan
- Steven A. Ringel
- Susanne Stemmer
- Tianshi Wang
- Wu Lu
- Zhanbo Xia
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research
- Ohio State University
- Semiconductor Research Corporation
- University of Delaware