Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide
Abstract
The ultrafast measurements of polarization switching dynamics on ferroelectric (FE) and antiferroelectric (AFE) hafnium zirconium oxide (HZO) are studied. The transient current during the polarization switching process is probed directly on the nanosecond scale. The switching time is determined to be as fast as 10 ns to reach fully switched polarization with characteristic switching times of 5.4 ns for FE HZO and 4.5 ns for AFE HZO by the nucleation limited switching model. The limitation by the parasitic effect on capacitor charging is found to be critical in the correct and accurate measurements of intrinsic polarization switching speed of HZO.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 12, 2019
- Source ID
- 10.1063/1.5098786
Entities
People
- Haiyan Wang
- Kin P Cheung
- Mengwei Si
- Peide Ye
- Pragya R. Shrestha
- Xiao Lyu
- Xing Sun
Organizations
- Defense Advanced Research Projects Agency
- National Institute of Standards and Technology
- National Science Foundation
- Purdue University
- Semiconductor Research Corporation
- Theiss Research