Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas
Abstract
To make complementary GaN electronics a desirable technology, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 24, 2019
- Source ID
- 10.1063/1.5099957
Entities
People
- Debdeep Jena
- Han Wui Then
- Huili Grace Xing
- Martin F. Schubert
- Reet Chaudhuri
- Samuel J Bader
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Intel Corporation
- National Science Foundation