Defects at the surface of β-Ga2O3 produced by Ar plasma exposure
Abstract
Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V to −0.02 V due to the buildup of deep trap concentration in the near surface region. Deep level spectra measurements indicate a strong increase in the top ∼200 nm of the plasma treated layer of the concentration of E2* (Ec − 0.8 eV) and especially E3 (Ec − 1.05 eV) deep electron traps. Capacitance-voltage profiling with monochromatic illumination also indicated a large increase in the upper ∼100 nm of the film in the concentration of deep acceptors with optical threshold for an ionization of ∼2.3 eV and 3.1 eV. Such defects at the surface led to a significant increase in reverse current, an increase in the ideality factor in forward current, and a dramatic decrease in the diffusion length of nonequilibrium charge carriers from 450 nm to 150 nm.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2019
- Source ID
- 10.1063/1.5109025
Entities
People
- A. Y. Polyakov
- A.A. Vasil'ev
- David J Smith
- Eugene Yakimov
- Fan Ren
- I. V. Shchemerov
- In‐Hwan Lee
- N. B. Smirnov
- Patrick H. Carey
- Stephen Pearton
- А. I. Kochkova
- А. В. Черных
Organizations
- Arizona State University
- Defense Threat Reduction Agency
- Korea University
- Ministry of Education and Science of the Russian Federation
- National Science Foundation
- National University of Science and Technology
- Russian Academy of Sciences
- University of Florida