Molecular beam epitaxy growth of antiferromagnetic Kagome metal FeSn
Abstract
FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of the magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn. Here, we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio ρxx(300K)/ρxx(2K)=24 and antiferromagnetic ordering at TN=353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 12, 2019
- Source ID
- 10.1063/1.5111792
Entities
People
- Hisashi Inoue
- Joseph Checkelsky
- Linda Ye
- Minyong Han
- Takehito Suzuki
Organizations
- Army Research Office
- Gordon and Betty Moore Foundation
- Massachusetts Institute of Technology
- National Science Foundation