Thermally induced phase switching in mechanically biased single crystal relaxors
Abstract
In this work, we examine the time-dependent piezoelectric response of [011] poled rhombohedral [Pb(In1/2Nb1/2)O3]0.24[Pb(Mg1/3Nb2/3)O3]0.44[PbTiO3]0.32 single crystals under variable thermal loading. We find that thermal radiation incident on a piezoelectric crystal held under mechanical compressive bias stress generates an abrupt jump in strain with a rise time <1 ms, much faster than the bulk thermal time scale. This discontinuity is associated with a weak first-order ferroelectric–ferroelectric structural phase transition as confirmed by in situ X-ray diffraction results. We demonstrate that this transition can be cycled repeatedly with low thermal hysteresis (<3 °C) under zero applied electric field with a sizable reversible strain jump of ∼0.12%. Moreover, we show that the thermally driven phase switching behavior can be tuned by varying the bias stress and/or electric field, establishing effective control parameters and conditions for future applications such as actuators, thermally controlled transducers, and sensors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 16, 2019
- Source ID
- 10.1063/1.5113723
Entities
People
- Anthony N. Caruso
- Eric A. Patterson
- Margo Staruch
- Peter Finkel
- S. E. Lofland
- Steve M. Young
Organizations
- Office of Naval Research
- Rowan University
- United States Naval Research Laboratory
- University of Missouri–Kansas City