Simulations for InAlAs digital alloy avalanche photodiodes
Abstract
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve and excess noise factor fit well with experimental results. Ionization coefficients calculated by the Monte Carlo technique were incorporated into the recurrence model, which is easier to implement and requires less computation time.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 21, 2019
- Source ID
- 10.1063/1.5114918
Entities
People
- Ann Kathryn Rockwell
- Avik W. Ghosh
- Jiangbin Zheng
- Joe C. Campbell
- Seth R. Bank
- Yifeng Peng
- Yuan Yuan
- Yuanzheng Paul Tan
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- University of Texas at Austin
- University of Virginia